Transistors 1T308B germanium diffusion-alloy structures p-n-p universal. Designed for use in auto generators, power amplifiers, and pulse devices. Main technical characteristics of the 1t308b transistor. RC max – constant collector power dissipation: 150 mW. FGR-the Maximum frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 120 MHz. UC-collector-base Breakdown voltage at the specified collector reverse current and emitter open circuit: 20 V. Uebo-Breakdown voltage of the emitter-base at the specified reverse current of the emitter and the open circuit of the collector: 3 V. IC max – maximum permissible DC collector current: 50 mA. Icbo-collector Reverse current – current through the collector junction at the specified collector-base reverse voltage and open emitter output: no more than 5 µa. H21e-Static current transfer coefficient for a circuit with a common emitter in the large signal mode: 50…120 (1V, 10mA). SC-collector junction Capacity: no more than 8 (5V). RCE us-saturation Resistance between collector and emitter: no more than 24 Ohms. CABG – noise Ratio of the transistor: not regulated. TC-time Constant of the feedback circuit at high frequency: no more than 400 PS. The item “100pcs 1T308B. /2N2048,1308/. BOX. Germanium transistor. USSR” is in sale since Friday, January 17, 2020. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “begrant-ru” and is located in OMSK. This item can be shipped worldwide.
- Country/Region of Manufacture: Russian Federation
- MPN: Does Not Apply
- Brand: USSR
- Model: 1T308B