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Transistors 1T308B germanium diffusion-alloy structures p-n-p universal. Designed for use in auto generators, power amplifiers, and pulse devices. Main technical characteristics of the 1t308b transistor. RC max – constant collector power dissipation: 150 mW. FGR-the Maximum frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 120 MHz. UC-collector-base Breakdown voltage at the specified collector reverse current and emitter open circuit: 20 V. Uebo-Breakdown voltage of the emitter-base at the specified reverse current of the emitter and the open circuit of the collector: 3 V. IC max – maximum permissible DC collector current: 50 mA. Icbo-collector Reverse current – current through the collector junction at the specified collector-base reverse voltage and open emitter output: no more than 5 µa. H21e-Static current transfer coefficient for a circuit with a common emitter in the large signal mode: 50…120 (1V, 10mA). SC-collector junction Capacity: no more than 8 (5V). RCE us-saturation Resistance between collector and emitter: no more than 24 Ohms. CABG – noise Ratio of the transistor: not regulated. TC-time Constant of the feedback circuit at high frequency: no more than 400 PS. The item “100pcs 1T308B. /2N2048,1308/. BOX. Germanium transistor. USSR” is in sale since Friday, January 17, 2020. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “begrant-ru” and is located in OMSK. This item can be shipped worldwide.

• Country/Region of Manufacture: Russian Federation
• MPN: Does Not Apply
• Brand: USSR
• Model: 1T308B

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1T308V Transistors 1t308v germanium diffusion-alloy structures p-n-p universal. Designed for use in oscillators, power amplifiers, pulse devices. Available in a metal-glass housing with flexible terminals. The type of device is indicated on the body. The mass of the transistor is not more than 2.2 g. Main technical characteristics of the transistor 1308V: Structure: p-n-p RC max – constant collector power dissipation: 150 mW; F – Limiting frequency current transfer ratio of the transistor for circuits with common-emitter and common-base: not less than 120 MHz; Ikbo – Breakdown voltage collector-base for a given reverse collector current and open-circuit emitter: 20; U – Breakdown voltage emitter-base for a given reverse current of the emitter and an open circuit collector: 3; IK max – Maximum permissible DC collector current: 50 mA; Ikbo – Reverse collector current – current through the collector junction for a given reverse voltage collector-base and open emitter output: less than 5 µa; h21e-Static current transfer coefficient for the circuit with a common emitter in the large signal mode: 80…150 (1V; 10mA); SC-collector junction capacitance: not more than 8 (5V); Rke us-saturation Resistance between collector and emitter: not more than 24 Ohms; Transistor noise figure: not more than 8 dB (1.6 MHz); TC-time Constant of the feedback circuit at high frequency: no more than 400 PS. The item “100pcs. 1T308V. 2N2048,1308/Germanium transistor. USSR” is in sale since Tuesday, May 21, 2019. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “begrant-ru” and is located in OMSK. This item can be shipped worldwide.

• Country/Region of Manufacture: Russian Federation
• MPN: Does Not Apply
• Brand: USSR
• Model: 1T308V

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Transistors 1T308G germanium diffusion-alloy structure p-n-p universal. Designed for use in auto generators, power amplifiers, pulse devices. Main technical characteristics of 1t308g transistor. RC max – constant dissipated collector power: 150 mW. FGR-the Maximum frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least 120 MHz. UC-collector-base Breakdown voltage at a given reverse current of the collector and open circuit of the emitter: 20 V. Uebo-Breakdown voltage of the emitter-base at the specified reverse current of the emitter and open circuit of the collector: 3 V. IC max – maximum permissible DC collector current: 50 mA. Icbo-Reverse collector current – current through the collector junction at a given reverse collector-base voltage and open emitter output: no more than 5 µa. H21e-Static current transfer coefficient for a circuit with a common emitter in the large signal mode: 50…300 (1V, 10mA). SC-collector junction Capacity: no more than 8 (5V). Rke us-saturation Resistance between collector and emitter: no more than 24 Ohms. Ksh – transistor noise Factor: no more than 6 dB (1.6 MHz). TC-time Constant of the feedback circuit at high frequency: no more than 400 PS. The item “100pcs. 1T308G /2N2048,1308/P-N-P/ Germanium transistor. USSR” is in sale since Wednesday, June 5, 2019. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “begrant-ru” and is located in OMSK. This item can be shipped worldwide.

• Model: 1T308G
• Country/Region of Manufacture: Russian Federation
• MPN: Does Not Apply
• Brand: USSR
• Transistor Type: PNP BJT

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