Soviet Union Ussr » 1t308g https://sovietunionussr.com Fri, 12 Jun 2026 04:03:45 +0000 en-US hourly 1 https://wordpress.org/?v=4.1.1 100pcs. 1T308G /2N2048,1308/P-N-P/ Germanium transistor. USSR https://sovietunionussr.com/100pcs-1t308g-2n20481308p-n-p-germanium-transistor-ussr/ https://sovietunionussr.com/100pcs-1t308g-2n20481308p-n-p-germanium-transistor-ussr/#comments Tue, 23 Jun 2020 03:53:46 +0000 http://sovietunionussr.com/100pcs-1t308g-2n20481308p-n-p-germanium-transistor-ussr/
100pcs. 1T308G /2N2048,1308/P-N-P/ Germanium transistor. USSR

100pcs. 1T308G /2N2048,1308/P-N-P/ Germanium transistor. USSR
Transistors 1T308G germanium diffusion-alloy structure p-n-p universal. Designed for use in auto generators, power amplifiers, pulse devices. Main technical characteristics of 1t308g transistor. RC max – constant dissipated collector power: 150 mW. FGR-the Maximum frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least 120 MHz. UC-collector-base Breakdown voltage at a given reverse current of the collector and open circuit of the emitter: 20 V. Uebo-Breakdown voltage of the emitter-base at the specified reverse current of the emitter and open circuit of the collector: 3 V. IC max – maximum permissible DC collector current: 50 mA. Icbo-Reverse collector current – current through the collector junction at a given reverse collector-base voltage and open emitter output: no more than 5 µa. H21e-Static current transfer coefficient for a circuit with a common emitter in the large signal mode: 50…300 (1V, 10mA). SC-collector junction Capacity: no more than 8 (5V). Rke us-saturation Resistance between collector and emitter: no more than 24 Ohms. Ksh – transistor noise Factor: no more than 6 dB (1.6 MHz). TC-time Constant of the feedback circuit at high frequency: no more than 400 PS. The item “100pcs. 1T308G /2N2048,1308/P-N-P/ Germanium transistor. USSR” is in sale since Wednesday, June 5, 2019. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “begrant-ru” and is located in OMSK. This item can be shipped worldwide.
  • Model: 1T308G
  • Country/Region of Manufacture: Russian Federation
  • MPN: Does Not Apply
  • Brand: USSR
  • Transistor Type: PNP BJT

100pcs. 1T308G /2N2048,1308/P-N-P/ Germanium transistor. USSR
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