https://sovietunionussr.com Fri, 12 Jun 2026 04:03:45 +0000 en-US hourly 1 https://wordpress.org/?v=4.1.1 https://sovietunionussr.com/p2b-2-rare-vintage-germanium-pnp-transistor-artificial-satellite-ussr-1956/ https://sovietunionussr.com/p2b-2-rare-vintage-germanium-pnp-transistor-artificial-satellite-ussr-1956/#comments Tue, 27 Jul 2021 16:22:28 +0000 http://sovietunionussr.com/p2b-2-rare-vintage-germanium-pnp-transistor-artificial-satellite-ussr-1956/








P2B / 2 RARE First Vintage Germanium PNP Transistor USSR for Soviet ARTIFICIAL EARTH SATELLITE October 1956 NEW. Model: P2B / 2. Material of transistor: germanium. Condition: NOS (new from old stock), never used. Quantity: 1pc per lot. Date: October 1956 (Made in USSR). Petersburg was founded in 1889. The inscription on the paper envelope of the P2B. Collector current 10 mA Collector voltage 25 V Current gain (hfe) 0.9 distortion factor no more then 15% Power at a load of at least 100 watts Power gain of at least 17 dB. This series transistors were used in the transmitter of the artificial satellite who were taken out to the orbit of the Earth in the USSR in 1950s. All the transistors were manufactured in the Soviet Union. We made photos of the last P2B vintage transistors from our set. The transistor is completely new in paper envelopes which were made a lot of years ago. The item in the photo is fully consistent with the original that you will receive in the parcel. We send one of the envelopes you see on the photos. 100% Genuine Soviet items. Safe and careful packaging. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Soviet Artificial Earth Satellite 1957 New. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Sovi.. P2b / 2 Rare First Vintage G.. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Soviet Artificial Earth Satellite 1957 New_1. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Soviet Artificial Earth Satellite 1957 New_2. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Soviet Artificial Earth Satellite 1957 New_3. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Soviet Artificial Earth Satellite 1957 New_4. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Soviet Artificial Earth Satellite 1957 New_5. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Soviet Artificial Earth Satellite 1957 New_6. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Soviet Artificial Earth Satellite 1957 New_7. P2b / 2 Rare First Vintage Germanium Pnp Transistor Ussr For Soviet Artificial Earth Satellite 1957 New_8. We pack all our items carefully and securely. We have positive experience of Internet commerce since 2010. If you have any problems or questions, please write us a message and we answer within one day. Thank you for your visit. All Right Reserved Amazingru – 2011. The item “P2B / 2 RARE Vintage Germanium PNP Transistor ARTIFICIAL SATELLITE USSR 1956″ is in sale since Monday, January 21, 2019. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “amazingru” and is located in Europe. This item can be shipped worldwide.

• Brand: USSR
• Model: P2B
• Country/Region of Manufacture: Russian Federation
• MPN: Does Not Apply
• Transistor Type: PNP BJT
• Function: Small Signal Transistor

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Q1 HFE around 50-70 , Q2 HFE around 95-120 (DCA75). 70pc only 10pc can fit to Q2. The item “NKT275 PNP Germanium Transistor NOS Set For Fuzzface” is in sale since Sunday, June 13, 2021. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “james1990.2012″ and is located in Tokyo. This item can be shipped worldwide.

• Collector-Emitter Voltage: 30 V
• Maximum Collector-Base Voltage: 50V
• Maximum Base-Emitter Voltage: 5 V
• MPN: Does Not Apply
• Item Length: 11.7 mm
• Minimum Operating Temperature: -20 °C (-4 °F)
• Brand: USSR
• Series:
• Type: PNP Germanium
• Maximum Collector-Emitter Saturation Voltage: 9 V
• Maximum DC Collector Current: 150 mA
• Item Height: 8 mm
• Number of Pins: 3
• Maximum Operating Frequency: 120 MHz
• Maximum Operating Temperature: 85 °C (185 °F)
• Country/Region of Manufacture: Russian Federation

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Transistors 1T308B germanium diffusion-alloy structures p-n-p universal. Designed for use in auto generators, power amplifiers, and pulse devices. Main technical characteristics of the 1t308b transistor. RC max – constant collector power dissipation: 150 mW. FGR-the Maximum frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 120 MHz. UC-collector-base Breakdown voltage at the specified collector reverse current and emitter open circuit: 20 V. Uebo-Breakdown voltage of the emitter-base at the specified reverse current of the emitter and the open circuit of the collector: 3 V. IC max – maximum permissible DC collector current: 50 mA. Icbo-collector Reverse current – current through the collector junction at the specified collector-base reverse voltage and open emitter output: no more than 5 µa. H21e-Static current transfer coefficient for a circuit with a common emitter in the large signal mode: 50…120 (1V, 10mA). SC-collector junction Capacity: no more than 8 (5V). RCE us-saturation Resistance between collector and emitter: no more than 24 Ohms. CABG – noise Ratio of the transistor: not regulated. TC-time Constant of the feedback circuit at high frequency: no more than 400 PS. The item “100pcs 1T308B. /2N2048,1308/. BOX. Germanium transistor. USSR” is in sale since Friday, January 17, 2020. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “begrant-ru” and is located in OMSK. This item can be shipped worldwide.

• Country/Region of Manufacture: Russian Federation
• MPN: Does Not Apply
• Brand: USSR
• Model: 1T308B

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1T308V Transistors 1t308v germanium diffusion-alloy structures p-n-p universal. Designed for use in oscillators, power amplifiers, pulse devices. Available in a metal-glass housing with flexible terminals. The type of device is indicated on the body. The mass of the transistor is not more than 2.2 g. Main technical characteristics of the transistor 1308V: Structure: p-n-p RC max – constant collector power dissipation: 150 mW; F – Limiting frequency current transfer ratio of the transistor for circuits with common-emitter and common-base: not less than 120 MHz; Ikbo – Breakdown voltage collector-base for a given reverse collector current and open-circuit emitter: 20; U – Breakdown voltage emitter-base for a given reverse current of the emitter and an open circuit collector: 3; IK max – Maximum permissible DC collector current: 50 mA; Ikbo – Reverse collector current – current through the collector junction for a given reverse voltage collector-base and open emitter output: less than 5 µa; h21e-Static current transfer coefficient for the circuit with a common emitter in the large signal mode: 80…150 (1V; 10mA); SC-collector junction capacitance: not more than 8 (5V); Rke us-saturation Resistance between collector and emitter: not more than 24 Ohms; Transistor noise figure: not more than 8 dB (1.6 MHz); TC-time Constant of the feedback circuit at high frequency: no more than 400 PS. The item “50pcs 1T308V. /2N2048,1308/. Germanium transistor. USSR” is in sale since Friday, March 22, 2019. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “begrant-ru” and is located in OMSK. This item can be shipped worldwide.

• Country/Region of Manufacture: Russian Federation
• MPN: Does Not Apply
• Brand: USSR
• Model: 1T308V

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Transistors 1T308G germanium diffusion-alloy structure p-n-p universal. Designed for use in auto generators, power amplifiers, pulse devices. Main technical characteristics of 1t308g transistor. RC max – constant dissipated collector power: 150 mW. FGR-the Maximum frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least 120 MHz. UC-collector-base Breakdown voltage at a given reverse current of the collector and open circuit of the emitter: 20 V. Uebo-Breakdown voltage of the emitter-base at the specified reverse current of the emitter and open circuit of the collector: 3 V. IC max – maximum permissible DC collector current: 50 mA. Icbo-Reverse collector current – current through the collector junction at a given reverse collector-base voltage and open emitter output: no more than 5 µa. H21e-Static current transfer coefficient for a circuit with a common emitter in the large signal mode: 50…300 (1V, 10mA). SC-collector junction Capacity: no more than 8 (5V). Rke us-saturation Resistance between collector and emitter: no more than 24 Ohms. Ksh – transistor noise Factor: no more than 6 dB (1.6 MHz). TC-time Constant of the feedback circuit at high frequency: no more than 400 PS. The item “100pcs. 1T308G /2N2048,1308/P-N-P/ Germanium transistor. USSR” is in sale since Wednesday, June 5, 2019. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “begrant-ru” and is located in OMSK. This item can be shipped worldwide.

• Model: 1T308G
• Country/Region of Manufacture: Russian Federation
• MPN: Does Not Apply
• Brand: USSR
• Transistor Type: PNP BJT

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