1T308V Transistors 1t308v germanium diffusion-alloy structures p-n-p universal. Designed for use in oscillators, power amplifiers, pulse devices. Available in a metal-glass housing with flexible terminals. The type of device is indicated on the body. The mass of the transistor is not more than 2.2 g. Main technical characteristics of the transistor 1308V: Structure: p-n-p RC max – constant collector power dissipation: 150 mW; F – Limiting frequency current transfer ratio of the transistor for circuits with common-emitter and common-base: not less than 120 MHz; Ikbo – Breakdown voltage collector-base for a given reverse collector current and open-circuit emitter: 20; U – Breakdown voltage emitter-base for a given reverse current of the emitter and an open circuit collector: 3; IK max – Maximum permissible DC collector current: 50 mA; Ikbo – Reverse collector current – current through the collector junction for a given reverse voltage collector-base and open emitter output: less than 5 µa; h21e-Static current transfer coefficient for the circuit with a common emitter in the large signal mode: 80…150 (1V; 10mA); SC-collector junction capacitance: not more than 8 (5V); Rke us-saturation Resistance between collector and emitter: not more than 24 Ohms; Transistor noise figure: not more than 8 dB (1.6 MHz); TC-time Constant of the feedback circuit at high frequency: no more than 400 PS. The item “100pcs. 1T308V. 2N2048,1308/Germanium transistor. USSR” is in sale since Tuesday, May 21, 2019. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is “begrant-ru” and is located in OMSK. This item can be shipped worldwide.

• Country/Region of Manufacture: Russian Federation
• MPN: Does Not Apply
• Brand: USSR
• Model: 1T308V