NKT275-PNP-Germanium-Transistor-NOS-Set-For-Fuzzface-01-pn

NKT275 PNP Germanium Transistor NOS Set For Fuzzface

Q1 HFE around 50-70 , Q2 HFE around 95-120 (DCA75). 70pc only 10pc can fit to Q2. The item “NKT275 PNP Germanium Transistor NOS Set For Fuzzface” is in sale since Sunday, June 13, 2021. This item is in the category “Business & Industrial\Electrical Equipment & Supplies\Electronic Components & Semiconductors\Semiconductors & Actives\Transistors”. The seller is […]

100pcs-1T308B-2N2048-1308-BOX-Germanium-transistor-USSR-01-izqv

100pcs 1T308B. /2N2048,1308/. BOX. Germanium transistor. USSR

Transistors 1T308B germanium diffusion-alloy structures p-n-p universal. Designed for use in auto generators, power amplifiers, and pulse devices. Main technical characteristics of the 1t308b transistor. RC max – constant collector power dissipation: 150 mW. FGR-the Maximum frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least […]

100pcs-1T308V-2N2048-1308-Germanium-transistor-USSR-01-vq

100pcs. 1T308V. 2N2048,1308/Germanium transistor. USSR

1T308V Transistors 1t308v germanium diffusion-alloy structures p-n-p universal. Designed for use in oscillators, power amplifiers, pulse devices. Available in a metal-glass housing with flexible terminals. The type of device is indicated on the body. The mass of the transistor is not more than 2.2 g. Main technical characteristics of the transistor 1308V: Structure: p-n-p RC […]

50pcs-1T308V-2N2048-1308-Germanium-transistor-USSR-01-pd

50pcs 1T308V. /2N2048,1308/. Germanium transistor. USSR

1T308V Transistors 1t308v germanium diffusion-alloy structures p-n-p universal. Designed for use in oscillators, power amplifiers, pulse devices. Available in a metal-glass housing with flexible terminals. The type of device is indicated on the body. The mass of the transistor is not more than 2.2 g. Main technical characteristics of the transistor 1308V: Structure: p-n-p RC […]

100pcs-1T308G-2N2048-1308-P-N-P-Germanium-transistor-USSR-01-hnjf

100pcs. 1T308G /2N2048,1308/P-N-P/ Germanium transistor. USSR

Transistors 1T308G germanium diffusion-alloy structure p-n-p universal. Designed for use in auto generators, power amplifiers, pulse devices. Main technical characteristics of 1t308g transistor. RC max – constant dissipated collector power: 150 mW. FGR-the Maximum frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least […]