1T308V Transistors 1t308v germanium diffusion-alloy structures p-n-p universal. Designed for use in oscillators, power amplifiers, pulse devices. Available in a metal-glass housing with flexible terminals. The type of device is indicated on the body. The mass of the transistor is not more than 2.2 g. Main technical characteristics of the transistor 1308V: Structure: p-n-p RC […]